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VRRM [V min]: 1300
VRRM [V max]: 1500
IFAV [A]: 200
Tс: 90
VFM (Tc=25°С) [V]: 3.50
IFM (Tc=25°С) [A]: 628
trr/Tjmax [μs]: 1.60
Tjmax [°С]: 125
Rthjc [°С/W]: 0.040
Package: D.B1
Design: disc
Type: fast recovery avalanche

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  • Description

    Low dynamic losses. Low charge and duration of reverse recovery. High value of reverse dissipation power. Tjmax = 125°C.

  • Applications

    These diodes are designed for use in static electric power converters as well as other DC and AC units operating on industrial or high frequency, often requiring short reverse recovery times and a high value of surge reverse power dissipation. Operation of avalanche diodes is based on the effect of reversible breakdown of the pn junction upon application of reverse voltage. As soon as the voltage exceeds a specific value, the current flowing throuh the avalanche diode shraply increases while the voltage remains unchanged.

Recommended heatsinks

O143, O243, O343



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