Characteristics improvement of thyristors and diodes
20 December 2011
Attention to all customers!
New specifications in datasheets.
Please, note that starting 20.11.2011 some changes for improvement were made in the following devices:
| Part number | Previous value | New value |
| T353-1600-18 | IGT=250mA (Tj=25⁰C), IGT=400mA @ Tj=-60⁰C V1.7 | IGT=300мА (Tj=25⁰C), IGT=500mA (Tj=-60⁰C) V1.8 |
| T253-1390-24 | IGT=250mA (Tj=25⁰C), IGT=400mA @ Tj=-60⁰C V1.5 | IGT=300мА (Tj=25⁰C), IGT=500mA (Tj=-60⁰C) V1.6 |
| DF261-250-16 | VFM=2.1V, package type D.SA1 V1.3 | VFM=2.2V, package type D.SA2 V1.4 |
| DF261-320-14 | package type D.SA1 V1.2 | package type D.SA2 V1.3 |
