Сonference “Power Electronics”-2011 (Moscow)

8 April 2011

On March 24 the specialists of our company participated in All-Russian conference "Power Electronics". Alexey Maratovich Surma, head of R&D Center "Proton-Electrotex" JSC, presented his report on the new directions of power semiconductor devices production:

- In 2010 started the production run of high voltage thyristors and diodes (up to 6,5 kV and 2 kA) and high voltage devices with precise selected characteristics of reverse recovery for operating in series assembly (or complete ready for usage stacks of such devices).

- Development and mass production of thyristor TFI473-1600 with 80 mm semiconductor element as the basis, which has unique characteristics in comparison with the best foreign analogs: voltage is up to 4,3 kV, average current is 1,6 kA, turn-off time is less than 80 µs, reverse recovery charge (125°C, di/dt = -50 A/µs) is max 1000 µC with possibility of precise selection in separate lots with less than 2% variation.

- Thyristor stacks КТ.5.11-800 are new developments for application in high voltage soft starters of asynchronous motors (up to 6 kV) of power from 630 kW.

- New technologies of chip connection with temperature compensator are applied.

More over A.M. Surma described advanced developments with new structural and technological concepts that are planning to be over this year:

- Center clippers of voltage with improved energy intensity that contain buried n-layers with reduced resistivity;

- Power high voltage dynistors produced on the basis of four-layer thyristor structures with integral transistor element- overvoltage limiter;

- High voltage and high current diodes with ultrasoft reverse recovery characteristic.




Address: 19 Leskova Str., Orel, 302040, Russia, room 27, off. 14

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