Semiconductor dies
Diode die DR56-1250-65
Semiconductor dies
| Diameter [mm]: | 56 |
| IFAV/ITAV (Tс,°C) [A]: | 1250 |
| VDRM/ VRRM [V]: | 6500 |
| Tjmax [°С]: | 150 |
- Documents and certificates
- Description
Diode die with a diameter of 56mm, manufactured by JSC "Proton-Electrotex”. The semiconductor element features high resistance to electro-thermal cycling, as well as low static and dynamic losses. The device is optimized for multiple housing designs.
The manufacturing process includes silicon wafers polishing, diffusion process and lithographic processing, alloy and evaporation processes, bevel polishing and bevel jet etching.
The developed elements comply with generally accepted world quality standards. upon customer request, "Proton-Electrotex" is ready to select the optimal semiconductor element for the specified operating modes.
- Applications
As part of a diode, it is used in rectifier bridges, traction converters, electric drives and inverters.
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Additional Information
To maintain the characteristics, the dies should be stored in nitrogen or in vacuum to avoid parameter changes due to oxidation and humidity of the molybdenum wafers.
Keep the die surface clean - use gloves, do not touch the die with bare hands.
Handle the dies carefully during installation - do not damage the edges of the coating and of the aluminum layer in the cathode area.
During encapsulation and testing, pay attention to:
- Parallel arrangement, flatness and mounting force – this must comply with the standards.
- Uneven pressure can damage the dies.
- Excess mounting force will damage the dies, and not enough mounting force will impair contact and heat dissipation.
If you have any questions, please contact us for additional information.
