Applying silver low-temperature sintering technology for improving the reliability of power components with large area semiconductor element

27 January 2017

Dmitry Titushkin, Alexander Stavtsev, Konstantin Stavtsev, Alexey Surma


The main idea, which is discussed in this article, is the aspects of increasing the reliability of power semiconductors with 80 mm and more diameter semiconductor chip applying the technologies of low-temperature sintering of silicon wafers and molybdenum discs using the silver nanoparticles. In addition, the dependence between the joint weld porosity and cycling capability of an experimental sample is examined, as well as the optimal pressure and temperature range of sintering process is defined. 

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