Simulation of surge current dependence on length and number of forward current impulses, flowing through a power semiconductor device
27 December 2010
Sergey Matyukhin / Associate Professor, PhD/Department of Electronics and Device Engineering at "The State University"
Alexander Stavtsev/ "Proton-Electrotex", Technical Director
The analytical expressions describing surge current dependence on the length and number of forward current impulses, flowing through a PSC device are obtained. By means of comparison of theoretical computations and results of computer simulation the equivalence of these expressions is tested.
