Simulation of surge current dependence on length and number of forward current impulses, flowing through a power semiconductor device

27 December 2010

Sergey Matyukhin / Associate Professor, PhD/Department of Electronics and Device Engineering at "The State University" 
Alexander Stavtsev/ "Proton-Electrotex", Technical Director

 The analytical expressions describing surge current dependence on the length and number of forward current impulses, flowing through a PSC device are obtained. By means of comparison of theoretical computations and results of computer simulation the equivalence of these expressions is tested.

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