Modeling of nonstationary thermal processes аnd computation of permissible overload currents of power semiconductor devices
15 July 2016
Sergey Matyukhin / Associate Professor, PhD/Department of Electronics and Device Engineering at "The State University"
Alexander Stavtsev/ "Proton-Electrotex", Technical Director
The basic physics of the numerical modeling of nonstationary thermal processes in power semiconductor devices (PSD) are stated. The algorithm of numerical computation of permissible overload currents is designed. The results of modeling of thermal processes at the time of activity of a thyristor Т243-500 and a diode DA343-630-34 are represented.
