Switching parameters of power semiconductor devices which characterize the changeover from their conducting state to a nonconducting state

11 March 2017

Sergey Matyukhin / Associate Professor, PhD/Department of Electronics and Device Engineering at "The State University" 
Alexander Stavtsev/ "Proton-Electrotex", Technical Director

Switching parameters characterizing the power semiconductor devices changeover from the conducting to a nonconducting state (turn-off) by a reverse voltage pulse are considered. The mathematical model describing the dependence of these parameters on a forward current strength and its rate of fall before its turn off is proposed. The algorithms of this dependence recovery on the experimental data basis are designed.

 

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