IGBT modules
IGBT MISM-DS17SM-1200N
IGBT modules
VCES [V]: | 1700 |
ICnom [A]: | 1200 |
Chip technology: | Trench-FS |
Configuration: | Double Switch |
Qualification: | Traction |
Housing (width/length) [mm]: |
MISM (140/130) |
Product status: | Coming soon |
- Documents and certificates
- Datasheet IGBT MISM-DS17SM-1200N
- Application Note Open PDF
- STEP model of the device IGBT MISM-DS17SM-1200N
- Description
- Low VCE(sat) value
- 10 μs short circuit of 150°C
- square RBSOA of 2xIC
- Low EMI
- Fast and soft reverse recovery
- Low voltage drop
- AlSiC baseplate
- AlN DBC substrate
- Ultrasonically welded power terminals
- Applications
- AC and DC motor drives
- High-power converters
- Wind-powered generator inverters
- Industrial equipment