MOSFET (SiC) modules

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MOSFET (SiC) modules

VCES [V]: 1200
ICnom [A]: 400
Chip technology: Trench-FS
Configuration: SiC MOSFET
Qualification: Traction
(width/length) [mm]:
MCDA (62/152)
Product status: Coming soon

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  • Documents and certificates
  • Description

    • SiC MOSFET and SiC SBD

    • Low inductance

    • Scheme — Half-Bridge

    • Switching cell topology

    • Low RDS(on) value

    • Optimized control circuits

    • AlN Substrates

    • AlSiC Baseplate Advantages

    • Industry standard package

    • Low static and dynamic losses

    • Fast and clean switching

    • Low Rth(j-c) value

    • High thermal cycling performance

  • Applications

    • Inverters for RES

    • DC/DC converters, inverters

    • Motor drives

    • Electric transport



Address: 19 Leskova Str., Orel, 302040, Russia, room 27, off. 14

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