MOSFET (SiC) modules
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MCDA-HBI12-I1000N-C
MOSFET (SiC) modules
| VCES [V]: | 1200 |
| ICnom [A]: | 1000 |
| Chip technology: | Trench-FS |
| Qualification: | Industrial |
| Housing (width/length) [mm]: |
MCDA (62/152) |
| Product status: | Coming soon |
- Documents and certificates
- Datasheet MCDA-HBI12-I1000N-C
- Description
• SiC MOSFET module in industry standard package
• Low inductance (< 10 nH)
• Scheme — Half-Bridge
• Switching cell topology
• Low RDS(on) value
• Optimized control circuits
• AlN Substrates
• Copper baseplate
• Industry standard package
• Low static and dynamic losses
• Fast and clean switching
• Low Rth(j-c) value
• High thermal cycling performance
- Applications
• Inverters for RES
• DC/DC converters, inverters
• Motor drives
• Electric transport
