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MOSFET (SiC) modules

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MCAR-HB12-I120-PB

MOSFET (SiC) modules

VCES [V]: 1200
ICnom [A]: 120
Chip technology: Trench-FS
Qualification: Automotive
Housing
(width/length) [mm]:		 MCAR (37/34)
Product status: Coming soon

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  • Documents and certificates
  • Description

    SiC MOSFET module in transfer-molded package 1200 V 120 A Half-Bridge

    • Automotive qualification

    • Low inductance (​

    • Half-bridge configuration

    • Si3N4 AMB Substrate

    • Isolation 4000 V

    • Ease of installation and parallel connection

    • Low Rth(j-c), Rth(c-h) value

    • Low static and dynamic losses

    • High thermal cycling performance

  • Applications

    • Inverters for RES

    • DC/DC converters, inverters

    • Motor drives

    • Electric transport

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Proton-Electrotex

Address: 19 Leskova Str., Orel, 302040, Russia, room 27, off. 14

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