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IGBT MIRA-IRB12LA-150N

IGBT modules

VCES [V]: 1200
ICnom [A]: 150
Chip technology: Trench-FS
Configuration: Inverter, rectifier, brake chopper
Qualification: Industrial
Housing
(width/length) [mm]:
MIRA (62/122)
Сonfirmation of production (719 Decree) : Entered into the register

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  • Documents and certificates
  • Description

    Low Inductance IGBT Module MIRA-IRB12LA-150N with 17 mm Height Housing. IGBT module with blocking voltage 1200V and current 150A. IGBT MIRA-IRB12LA-150N has copper baseplate, improved thermal cycling and integrated temperature sensor.

  • Applications

    Low Inductance IGBT Module MIRA-IRB12LA-150N successful used in AC motor drives, invertors and power supplies.

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Proton-Electrotex

Address: 19 Leskova Str., Orel, 302040, Russia, room 27, off. 14

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