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Diode D056-9500


VRRM [V min]: 200
VRRM [V max]: 400
IFAV [A]: 11814
Tс: 85
VFM (Tc=25°С) [V]: 1.08
IFM (Tc=25°С) [A]: 6300
VF(TO)/Tjmax [V]: 0.74
rT/Tjmax [mΩ]: 0.030
Tjmax [°С]: 180
Rthjc [°С/W]: 0.0050
Package: ------------
Design: disc
Type: welding

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  • Documents and certificates
  • Description

    D056-9500 is a welding diode in housingless disc design. It has a repetitive peak reverse voltage VRRM of 200-400 V and low static losses. Industry standard design enables easy installation into existing equipment. Maximal junction temperature Tjmax is 180 °C. Diameter of the contact surface is 50 mm.

    An advantage of housingless welding diodes is the absence of a ceramic housing, reducing their weight and dimensions. Besides, lower amount of contact surfaces results in lower thermal resistance allowing these devices conduct high currents even at significant temperature changes.

    "D0" series of welding diodes by Proton-Electrotex has the following features:
    ∙ ability to conduct high mean forward current, allowing to reduce the amount of parallel devices
    ∙ high resistance to electric and thermal cycling ensures a long service life;
    ∙ minimal static losses;
    ∙ high maximal junction temperature (Tjmax) allows these diodes to conduct higher current with the same cooling system;
    ∙ possibility of double-sided cooling.

    At the customer's request Proton-Electrotex is able to select the optimal power diode for given operation modes. It is also possible to ship ready-to-use power semiconductors in assembly with heatsinks.
    To buy the D056-9500 diode, request a quotation or a technical advice, please contact the sales department by phone +7 4862 440456 or email marketing@proton-electrotex.com.

  • Applications

    Welding diodes are mostly used in contact welding machines. Operation in welding machines is characterized by short impulses of current causing the semiconductor structure to heat and then cool down, as a result of limitations of welding machine duty cycle (modes "operation - cooling"). As a result, the semiconductor is exposed to frequent cyclical thermal and mechanical stress. All this imposes harsh requirements to static and dynamic properties of the devices.



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