IGBT modules
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IGBT MISV-SS33EL-1200N
IGBT modules
| VCES [V]: | 3300 |
| ICnom [A]: | 1200 |
| Chip technology: | Trench-FS |
| Configuration: | Double Switch |
| Qualification: | Traction |
| Housing (width/length) [mm]: |
MISV (140/130) |
| Product status: | Coming soon |
- Documents and certificates
- Datasheet IGBT MISV-SS33EL-1200N
- Application Note Open PDF
- 3D model of the device IGBT MISV-SS33EL-1200N
- Description
IGBT module high-power & increased rated insulation voltage 10.4 kV
- Low VCE(sat) value
- Low EMI
- Fast and soft reverse recovery
- AlSiC baseplate
- AlN DBC substrate
- Ultrasonically welded power terminals
- High rated insulation voltage – 10.4 kV
- RoHS compliant
- Applications
- Auxiliary power systems for rail transport
- Auxiliary power systems for public transport
- Industrial equipment
