IGBT modules

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IGBT MISV-SS33EL-1200N

IGBT modules

VCES [V]: 3300
ICnom [A]: 1200
Chip technology: Trench-FS
Configuration: Double Switch
Qualification: Traction
Housing
(width/length) [mm]:
MISV (140/130)
Product status: Coming soon

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  • Documents and certificates
  • Description

    IGBT module high-power & increased rated insulation voltage 10.4 kV

    • Low VCE(sat) value
    • Low EMI
    • Fast and soft reverse recovery
    • AlSiC baseplate
    • AlN DBC substrate
    • Ultrasonically welded power terminals
    • High rated insulation voltage – 10.4 kV
    • RoHS compliant
  • Applications
    • Auxiliary power systems for rail transport 
    • Auxiliary power systems for public transport
    • Industrial equipment

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Proton-Electrotex

Address: 19 Leskova Str., Orel, 302040, Russia, room 27, off. 14

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