THYRISTOR/DIODE MODULES

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MT/Dx-1000-12-D

THYRISTOR/DIODE MODULES

VDRM/ VRRM [V]: 1000-1200
IFAV/ITAV (Tс,°C) [A]: 1000(77)
VFM/VTM (Tc=25°С) [V]: 1.25
IFM/ITM (Tc=25°С) [A]: 3140
VT(TO)/Tjmax [V]: 0.90
rT/Tjmax [mΩ]: 0.150
tq [μs]: 200
Tjmax [°С]: 140
Rthjc [°С/W]: 0.0500
Package: M.D
Baseplate width/length [mm]: 77/150
Design: dual component
Type: thyristor-diode
Datasheet:

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  • Description

    Pressure contact design, high resistance to electric and thermal cycling, various circuit schemes available. Tjmax=140 °C.

  • Applications

    The modules are designed for energy converters and other DC and AC sysems of various power electrical installations. The required pressure of the semiconductor element is provided structurally, greatly simplifying mounting of the modules. It is possible to use several modules on a single heatsink, significantly reducing overall dimensions of the assembly.

    Main applications:
    - Rectifier bridges
    - AC regulators
    - DC motor controls
    - Power sources
    - Electric drives


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Proton-Electrotex

Address: 19 Leskova Str., Orel, 302040, Russia, room 27, off. 14

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