THYRISTOR/DIODE MODULES

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MD/Tx-160-36-C1

THYRISTOR/DIODE MODULES

VDRM/ VRRM [V]: 3000-3600
IFAV/ITAV (Tс,°C) [A]: 160(88)
VFM/VTM (Tc=25°С) [V]: 2.50
IFM/ITM (Tc=25°С) [A]: 785
VT(TO)/Tjmax [V]: 1.20
rT/Tjmax [mΩ]: 2.300
tq [μs]: 300
Tjmax [°С]: 125
Rthjc [°С/W]: 0.1100
Package: M.C1
Baseplate width/length [mm]: 50/115
Design: dual component
Type: thyristor-diode
Datasheet:

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  • Description

    Pressure contact design, high resistance to electric and thermal cycling, various circuit schemes available. Tjmax=125 °C.

  • Applications

    The modules are designed for energy converters and other DC and AC sysems of various power electrical installations. The required pressure of the semiconductor element is provided structurally, greatly simplifying mounting of the modules. It is possible to use several modules on a single heatsink, significantly reducing overall dimensions of the assembly.

    Main applications:
    - Rectifier bridges
    - AC regulators
    - DC motor controls
    - Power sources
    - Electric drives


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Proton-Electrotex

Address: 19 Leskova Str., Orel, 302040, Russia, room 27, off. 14

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